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NXP Opens High Performance RF Product Creation Center in USA

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New design center near Boston strengthens support for RF customers

NXP Semiconductors today announced the opening of the high performance radio frequency (RF) product creation center (PCC) in Billerica, Massachusetts, U.S.A. This new NXP facility, located near Boston, will focus on the design of RF and Microwave integrated circuits (ICs) used in demanding applications such as defense & aerospace, Industrial, Scientific and Medical (ISM) satellite receivers and broadband communications.

Facts/Highlights:

- Leveraging NXP’s unique IP, product portfolio, processes and manufacturing capabilities, the design center will further enhance the position of NXP in these growing RF & Microwave markets.

- With its East Coast location, and close proximity to design teams in France and the Netherlands, the center will also strengthen the technical and application support provided to the company’s Americas-based customers.

- Uniquely positioned in the RF & Microwave market with a rich portfolio of high-performance processes in-house, NXP’s broad RF portfolio spans high-power LDMOS for power amplifiers to the latest SiGe:C BiCMOS for RF/IF MMICs. Additionally, advanced CMOS process for high-speed converters completes the RF front-end. As all these technologies are designed and manufactured in-house, they are custom-tuned to application-specific requirements.

- NXP also has a long history as one of the industry’s leading compact model developers, so all technologies are supported by their associated, fully characterized RF models. This in-house process supports the company’s global design teams in leading innovation and the development of products and solutions for some of the most pressing RF front-end challenges.

“This new product creation center builds upon NXP's 50-year heritage in RF innovation, further refining, localizing and extending that competence to meet customer demands and create innovative applications,” said John Croteau, senior vice president and general manager of the High Performance RF and Lighting business lines at NXP Semiconductors. “Process, packaging and circuit design innovation remain pillars of our strategy, yielding leadership positions in technologies such as SiGe:C, LDMOS and JESD204A."

 

Related Links:

http://www.nxp.com

Tags:     NXP      High Performance RF Product Creation Center      USA      Boston
 

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